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this is information on a product in full production. march 2014 docid025115 rev 3 1/14 STW22N95K5 automotive-grade n-channel 950 v, 0.280 ? typ., 17.5 a zener-protected supermesh? 5 power mosfet datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 1 2 3 to-247 d(2) g(1) s(3) am01476v1 order code v ds r ds(on) max i d p tot STW22N95K5 950 v 0.330 17.5 a 250 w table 1. device summary order code marking packages packaging STW22N95K5 22n95k5 to-247 tube www.st.com
contents STW22N95K5 2/14 docid025115 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid025115 rev 3 3/14 STW22N95K5 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 17.5 a i d drain current (continuous) at t c = 100 c 11 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 70 a p tot total dissipation at t c = 25 c 250 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 182 mj esd gate-source human body model (r= 1,5 k , c = 100 pf) 2kv dv/dt (2) 2. i sd 17.5 a, di/dt 100 a/ s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (3) 3. v sd 760 v mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-amb thermal resistance junction-amb max 50 c/w
electrical characteristics STW22N95K5 4/14 docid025115 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950 v, 1 a v ds = 950 v, tc=125 c 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.280 0.330 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -1550- pf c oss output capacitance - 140 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -178- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -65-pf r g intrinsic gate resistance f = 1mhz open drain - 3.5 - q g total gate charge v dd = 760 v, i d = 17.5 a v gs =10 v (see figure 16 ) -48-nc q gs gate-source charge - 9 - nc q gd gate-drain charge - 32.5 - nc
docid025115 rev 3 5/14 STW22N95K5 electrical characteristics 14 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 475 v, i d = 9 a, r g =4.7 , v gs =10 v (see figure 18 ) -18-ns t r rise time - 9 - ns t d(off) turn-off delay time - 65 - ns t f fall time - 18 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 17.5 a i sdm source-drain current (pulsed) - 70 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17.5 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 17.5 a, v dd = 60 v di/dt = 100 a/ s, (see figure 17 ) - 513 ns q rr reverse recovery charge - 12 c i rrm reverse recovery current - 46 a t rr reverse recovery time i sd = 17.5 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 17 ) - 670 ns q rr reverse recovery charge - 15 c i rrm reverse recovery current - 44 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - - v
electrical characteristics STW22N95K5 6/14 docid025115 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am11184v2 i d 15 10 5 0 0 10 v ds (v) 20 (a) 5 15 20 25 6v 7v 8v v gs =11v 30 9v 35 40 am11185v2 i d 15 10 5 0 58 v gs (v) (a) 79 20 25 v ds =20v 30 35 40 6 45 am11186v2 v gs 6 4 2 0 0 q g (nc) (v) 30 8 10 20 10 v dd =760v i d =17.5a 40 600 300 0 v ds v ds ( v) 150 450 750 50 am18161v1 r ds(on) 0.3 0.25 0.2 0.15 68 i d (a) ( ) 79 v gs =10v 10 11 0.4 0.35 12 13 am11188v2
docid025115 rev 3 7/14 STW22N95K5 electrical characteristics 14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. maximum avalanche energy vs starting tj figure 13. normalized v (br)dss vs temperature c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 1000 100 ciss coss crss 10000 am11189v12 e oss 8 2 0 0 v ds (v) (j) 600 200 400 10 12 800 14 16 18 4 6 20 22 24 26 am11190v2 v gs(th) 0.6 0.5 0.4 0.3 t j (c) (norm) -100 0.7 0 -50 50 0.9 0.8 1.0 1.2 1.1 100 150 i d = 100a am11192v2 r ds(on) 2.0 1.5 1.0 0.5 t j (c) (norm) -100 0 -50 50 2.5 0 100 150 i d = 9a v gs = 10v am11193v2 e as 0 50 t j (c) (j) 25 75 0 40 80 100 125 120 160 i d =6 a v dd =50 v am11194v1 v (br)dss t j (c) (norm) -75 75 -25 125 0.85 0.9 0.95 1 1.05 1.1 25 i d = 1ma am11191v1
electrical characteristics STW22N95K5 8/14 docid025115 rev 3 figure 14. source-drain diode forward characteristics t j =-50c t j =150c t j =25c v sd 48 i sd (a) (v) 616 10 12 0.5 0.6 0.7 0.8 0.9 1.0 14 gipd110920131522fsr
docid025115 rev 3 9/14 STW22N95K5 test circuits 14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STW22N95K5 10/14 docid025115 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025115 rev 3 11/14 STW22N95K5 package mechanical data 14 figure 21. to-247 drawing 0075325_g
package mechanical data STW22N95K5 12/14 docid025115 rev 3 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid025115 rev 3 13/14 STW22N95K5 revision history 14 5 revision history table 10. document revision history date revision changes 17-oct-2013 1 initial release. 19-dec-2013 2 ? datasheet promoted from preliminary data to production data ? modified: title and features ? minor text changes 20-mar-2014 3 ? modified: note 3 in table 2 ? modified: q gs and q gd typical values in table 5 ? modified: typical values in table 6 and 7 ? updated: figure 6 ? minor text changes
STW22N95K5 14/14 docid025115 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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